喷涂硅靶材 Spray Si Target
产品说明Product description
以等离子体为热源，在真空环境，或负压氮气或氩气保护环境下将Si粉末加热到熔融或半熔融状态并高速冲击背管表面形成致密涂层，从而制备出高纯度、低氧含量、高致密度Si靶材。
With plasma as the heat source, high purity, low oxygen content, high density Si targets are produced from Si powder. The Si powder is heated to molten or semi-molten state in vacuum or at a negative pressure of nitrogen (N2) or argon (Ar) and deposited on the surface of backing tube at high speed to form dense coatings.
产品特点Products feature
| 项目 Item | 参数 Specifications | 检测手段 Testing method |
| 纯度Purity（Si+B） | ≥ 99.99% |
|
| 密度Density | ≥2.2 g/cm3 | 阿基米德密度仪 Archimedes densimeter |
| 杂质含量Inclusions | Fe +Al+Ca: ≤50 ppm B: ≤100 ppm O: ≤2000 ppm N: ≤500 ppm 杂质总和(O、N、B除外): ≤100 ppm Total impurity (excluding O, N, B ): ≤100 ppm | ICP |
| 电阻率 Electrical resistivity | ≤10Ω·cm | 四探针电阻率仪 Four probe resistivity meter |
背管材质 Backing tube
-选用304/316L不锈钢（无磁）。
304/316L stainless steel (non-magnetic).
靶材尺寸Dimension
-按照图纸要求加工
According to customized drawings.
应用领域Applications
-用于制作SiO2/Si3N4膜，主要用于光学玻璃，触摸屏之AR膜系，Low-E镀膜玻璃，半导体电子，平面显示，触摸屏。
For deposition of SiO2/Si3N4 films, for optical glasses, AR films of touch panel screens, Low-E glasses, semiconductor devices and flat panel screens.
